Temperature-dependent dielectric function of intrinsic silicon: Analytic models and atom-surface potentials
Document Type
Article
Publication Date
7-15-2022
Abstract
The optical properties of monocrystalline, intrinsic silicon are of interest for technological applications as well as fundamental studies of atom-surface interactions. For an enhanced understanding, it is of great interest to explore analytic models which are able to fit the experimentally determined dielectric function ?(T?,?), over a wide range of frequencies and a wide range of the temperature parameter T?=(T-T0)/T0, where T0=293K represents room temperature. Here, we find that a convenient functional form for the fitting of the dielectric function of silicon involves a Lorentz-Dirac curve with a complex, frequency-dependent amplitude parameter, which describes radiation reaction. We apply this functional form to the expression [?(T?,?)-1]/[?(T?,?)+2], inspired by the Clausius-Mossotti relation. With a very limited set of fitting parameters, we are able to represent, to excellent accuracy, experimental data in the (angular) frequency range 0
Recommended Citation
Moore, C.; Adhikari, C. M.; Das, T.; Resch, L.; Ullrich, C. A.; and Jentschura, U. D., "Temperature-dependent dielectric function of intrinsic silicon: Analytic models and atom-surface potentials" (2022). College of Health, Science, and Technology. 1101.
https://digitalcommons.uncfsu.edu/college_health_science_technology/1101