5MeV Si ion modification on thermoelectric SiO2/SiO2+Cu multilayer films
Document Type
Conference Proceeding
Publication Date
12-1-2012
Abstract
We prepared samples by electron beam physical vapor deposition EB-PVD followed by ion bombardment. The samples were than characterized by photoluminescence (PL), x-ray photoelectron spectroscopy (XPS). PL was used to characterize the available energy states. XPS was used to determine the binding energies. The ML's are comprised of 100 alternating layers of SiO 2/SiO2+Cu. © 2011 Materials Research Society.
Recommended Citation
Smith, C.; Budak, S.; Jordan, T.; Chacha, J.; Chhay, B.; Heidary, K.; Johnson, R. B.; Muntele, C.; and Ila, D., "5MeV Si ion modification on thermoelectric SiO2/SiO2+Cu multilayer films" (2012). College of Health, Science, and Technology. 724.
https://digitalcommons.uncfsu.edu/college_health_science_technology/724