Superlattice multinanolayered thin films of SiO2/SiO2 + Ge for thermoelectric device applications
Document Type
Conference Proceeding
Publication Date
7-1-2013
Abstract
Thermoelectric generators convert heat to electricity. Effective thermoelectric materials and devices have a low thermal conductivity and a high electrical conductivity. The performance of thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S2?T/K, where S is the Seebeck coefficient, ? is the electrical conductivity, T is the absolute temperature, and K is the thermal conductivity. We have prepared 100 alternating layers of SiO2/SiO2+ Ge superlattice thin films using ion beam-assisted deposition for the thermoelectric generator device application. The 5 MeV Si ion bombardments were performed using the Center for Irradiation Materials' Pelletron ion beam accelerator to form quantum dots and/or quantum clusters in the multinanolayer superlattice thin films to decrease the cross-plane thermal conductivity and increase the cross-plane Seebeck coefficient and cross-plane electrical conductivity. The thermoelectric and transport properties have been characterized for SiO2/SiO2+ Ge superlattice thin films. © The Author(s) 2013.
Recommended Citation
Budak, Satilmis; Parker, Robert; Smith, Cydale; Muntele, Claudiu; Heidary, Kaveh; Johnson, Ralph B.; and Ila, Daryush, "Superlattice multinanolayered thin films of SiO2/SiO2 + Ge for thermoelectric device applications" (2013). College of Health, Science, and Technology. 960.
https://digitalcommons.uncfsu.edu/college_health_science_technology/960